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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.148
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 3.6A SOT-23-3 TO-236-3, SC-59, SOT-23-3 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro3™/SOT-23 0 3000 N-Channel - 40V 3.6A (Ta) 56 mOhm @ 3.6A, 10V 2.5V @ 25µA 3.9nC @ 4.5V 266pF @ 25V 4.5V, 10V ±16V 1.3W (Ta)
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Per Unit
$0.173
RFQ
45,000
In-stock
Diodes Incorporated MOSFET N-CH 100V 1.6A SOT-23 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 0 3000 N-Channel - 100V 1.4A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±16V 1.3W (Ta)
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Per Unit
$0.119
RFQ
39,000
In-stock
Infineon Technologies MOSFET N-CH 60V 1.2A SOT23-3 TO-236-3, SC-59, SOT-23-3 HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro3™/SOT-23 0 3000 N-Channel - 60V 1.2A (Ta) 480 mOhm @ 1.2A, 10V 2.5V @ 25µA 0.67nC @ 4.5V 64pF @ 25V 4.5V, 10V ±16V 1.25W (Ta)
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