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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 42A D2PAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK (TO-252AA) 0 400 N-Channel - 40V 56A (Tc) 4.9 mOhm @ 56A, 10V 2.5V @ 100µA 53nC @ 4.5V 3617pF @ 25V 10V ±16V 143W (Tc)
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Infineon Technologies MOSFET N-CH 30V 76A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 400 N-Channel - 30V 76A (Tc) 6 mOhm @ 40A, 10V 1V @ 250µA 140nC @ 4.5V 5000pF @ 25V 4.5V, 10V ±16V 63W (Tc)
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Infineon Technologies MOSFET N-CH 55V 51A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 400 N-Channel - 55V 51A (Tc) 13.5 mOhm @ 31A, 10V 3V @ 250µA 36nC @ 5V 1620pF @ 25V 4.5V, 10V ±16V 80W (Tc)
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