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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 55V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 42A (Tc) 8 mOhm @ 42A, 10V 3V @ 250µA 66nC @ 5V 2900pF @ 25V 4.5V, 10V ±16V 130W (Tc)
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Infineon Technologies MOSFET N-CH 55V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 42A (Tc) 13.5 mOhm @ 36A, 10V 3V @ 250µA 35nC @ 5V 1570pF @ 25V 4.5V, 10V ±16V 110W (Tc)
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Infineon Technologies MOSFET N-CH 55V 42A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 55V 42A (Tc) 13.5 mOhm @ 36A, 10V 3V @ 250µA 35nC @ 5V 1570pF @ 25V 4.5V, 10V ±16V 110W (Tc)
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Infineon Technologies MOSFET N-CH 55V 10A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 10A (Tc) 140 mOhm @ 6A, 10V 1V @ 250µA 7.9nC @ 5V 265pF @ 25V 4.5V, 10V ±16V 28W (Tc)
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Infineon Technologies MOSFET N-CH 55V 28A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 55V 28A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 55V 28A (Tc) 40 mOhm @ 17A, 10V 2V @ 250µA 25nC @ 5V 880pF @ 25V 4V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 30V 35A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 30V 35A (Tc) 31 mOhm @ 21A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 30V 23A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 30V 23A (Tc) 45 mOhm @ 14A, 10V 1V @ 250µA 15nC @ 4.5V 450pF @ 25V 4.5V, 10V ±16V 45W (Tc)
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Infineon Technologies MOSFET N-CH 55V 42A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 42A (Tc) 27 mOhm @ 25A, 10V 2V @ 250µA 48nC @ 5V 1700pF @ 25V 4V, 10V ±16V 110W (Tc)
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Infineon Technologies MOSFET N-CH 30V 55A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 30V 55A (Tc) 19 mOhm @ 33A, 10V 1V @ 250µA 50nC @ 4.5V 1600pF @ 25V 4.5V, 10V ±16V 107W (Tc)
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Infineon Technologies MOSFET N-CH 30V 35A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 30V 35A (Tc) 31 mOhm @ 21A, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V 4.5V, 10V ±16V 68W (Tc)
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Infineon Technologies MOSFET N-CH 30V 55A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 30V 55A (Tc) 19 mOhm @ 33A, 10V 1V @ 250µA 50nC @ 4.5V 1600pF @ 25V 4.5V, 10V ±16V 107W (Tc)
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