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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.050
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RFQ
STMicroelectronics MOSFET N-CH 30V 17A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active I-PAK 0 1 N-Channel - 30V 17A (Tc) 50 mOhm @ 8.5A, 10V 2.2V @ 250µA 6.5nC @ 5V 320pF @ 25V 5V, 10V ±16V 30W (Tc)
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Per Unit
$1.010
RFQ
2,833
In-stock
STMicroelectronics MOSFET N-CH 600V 1A IPAK TO-251-3 Short Leads, IPak, TO-251AA SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active I-PAK 0 1 N-Channel - 600V 1A (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 10V ±30V 30W (Tc)
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Per Unit
$1.210
RFQ
1,302
In-stock
STMicroelectronics MOSFET N-CH 450V 1.5A IPAK TO-251-3 Short Leads, IPak, TO-251AA SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -65°C ~ 150°C (TJ) Active I-PAK 0 1 N-Channel - 450V 1.5A (Tc) 4.5 Ohm @ 500mA, 10V 3.7V @ 250µA 7nC @ 10V 160pF @ 25V 10V ±30V 30W (Tc)
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