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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$7.220
RFQ
537
In-stock
STMicroelectronics MOSFET N-CH 600V 14A TO-247 TO-247-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 600V 14A (Tc) 299 mOhm @ 7A, 10V 4V @ 250µA 37nC @ 10V 1250pF @ 50V 10V ±25V 125W (Tc)
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Per Unit
$2.440
RFQ
813
In-stock
STMicroelectronics MOSFET N-CH 620V 8.4A TO220 TO-220-3 SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 1 N-Channel - 620V 8.4A (Tc) 750 mOhm @ 4A, 10V 4.5V @ 100µA 42nC @ 10V 1250pF @ 50V 10V ±30V 125W (Tc)
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Per Unit
$6.900
RFQ
391
In-stock
STMicroelectronics MOSFET N-CH 600V 14A TO-247 TO-247-3 FDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-247-3 0 1 N-Channel - 600V 14A (Tc) 299 mOhm @ 7A, 10V 5V @ 250µA 40nC @ 10V 1250pF @ 50V 10V ±25V 125W (Tc)
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