Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$7.030
RFQ
290
In-stock
STMicroelectronics MOSFET N CH 950V 10A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 950V 10A (Tc) 850 mOhm @ 5A, 10V 5V @ 100µA 51nC @ 10V 1620pF @ 100V 10V ±30V 40W (Tc)
Default Photo
Per Unit
$6.870
RFQ
398
In-stock
STMicroelectronics MOSFET N-CH 950V 10A TO220FP TO-220-3 Full Pack SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220FP 0 1 N-Channel - 950V 10A (Tc) 850 mOhm @ 5A, 10V 5V @ 100µA 51nC @ 10V 1620pF @ 100V 10V ±30V 40W (Tc)
Default Photo
Per Unit
$6.380
RFQ
740
In-stock
STMicroelectronics MOSFET N-CH 620V 15.0A TO220FP TO-220-3 Full Pack SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220FP 0 1 N-Channel - 620V 15.5A (Tc) 340 mOhm @ 7.5A, 10V 4.5V @ 100µA 105nC @ 10V 3100pF @ 50V 10V ±30V 40W (Tc)
Page 1 / 1