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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 49A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 1125 N-Channel - 20V 49A (Tc) 11 mOhm @ 15A, 10V 2.55V @ 250µA 11nC @ 4.5V 810pF @ 10V 4.5V, 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET N-CH 30V 43A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 900 N-Channel - 30V 43A (Tc) 13.8 mOhm @ 15A, 10V 2.25V @ 250µA 11nC @ 4.5V 780pF @ 15V 4.5V, 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET P-CH 100V 6.6A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete IPAK (TO-251) 0 75 P-Channel - 100V 6.6A (Tc) 480 mOhm @ 3.9A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V 40W (Tc)
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Per Unit
$1.690
RFQ
681
In-stock
STMicroelectronics MOSFET P-CH 60V 10A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Obsolete I-PAK 0 1 P-Channel - 60V 10A (Tc) 200 mOhm @ 5A, 10V 4V @ 250µA 21nC @ 10V 850pF @ 25V 10V ±20V 40W (Tc)
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