- Package / Case :
- Series :
- Packaging :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO220-3 | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 2000 | N-Channel | - | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 200V 5.5A TO-220AB | TO-220-3 | SIPMOS® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 2000 | N-Channel | - | 200V | 5.5A (Tc) | 600 mOhm @ 4.5A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | 40W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 43A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V | 40W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 20V 49A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 20V | 49A (Tc) | 11 mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | 4.5V, 10V | ±20V | 40W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 43A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 30V | 43A (Tc) | 13.8 mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 780pF @ 15V | 4.5V, 10V | ±20V | 40W (Tc) | |||
|
|
56,000
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 6.6A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2000 | P-Channel | - | 100V | 6.6A (Tc) | 480 mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 40W (Tc) |
