- Manufacture :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | TO-263 (D²Pak) | 0 | 450 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-7-3 | 0 | 1000 | N-Channel | - | 80V | 160A (Tc) | 3.2 mOhm @ 100A, 10V | 4V @ 150µA | 112nC @ 10V | 7750pF @ 25V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A TO220AB | TO-220-3 | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-220AB | 0 | 1000 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 25A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | 0 | 1 | N-Channel | - | 650V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 900V 15A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | 0 | 1 | N-Channel | - | 900V | 15A (Tc) | 340 mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 900V 15A TO-220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | 0 | 1 | N-Channel | - | 900V | 15A (Tc) | 340 mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 600V 25A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ E6 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 16.1A (Tc) | 250 mOhm @ 4.4A, 10V | 3.5V @ 400µA | 45nC @ 10V | 950pF @ 1000V | 10V | ±20V | 208W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N CH 40V 120A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263 (D²Pak) | 0 | 800 | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | 208W (Tc) | |||
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655
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 600V 30A TO247 | TO-247-3 | MDmesh™ M6 | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 600V | 30A (Tc) | 99 mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3nC @ 10V | 1960pF @ 100V | 10V | ±25V | 208W (Tc) | |||
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828
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 600V 30A TO220 | TO-220-3 | MDmesh™ M6 | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 600V | 30A (Tc) | 99 mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3nC @ 10V | 1960pF @ 100V | 10V | ±25V | 208W (Tc) | |||
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7,000
In-stock
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Infineon Technologies | MOSFET N-CH 600V 25A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | 0 | 1 | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V | 208W (Tc) | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-CH 900V 15A TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 900V | 15A (Tc) | 340 mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | 10V | ±20V | 208W (Tc) |
