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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.760
RFQ
1,874
In-stock
Diodes Incorporated MOSFET N-CH 60V 1.1A TO92-3 TO-226-3, TO-92-3 (TO-226AA) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-92-3 0 1 N-Channel 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V 850mW (Ta)
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Per Unit
$1.760
RFQ
2,453
In-stock
Diodes Incorporated MOSFET N-CH 60V 1.1A TO92-3 TO-226-3, TO-92-3 (TO-226AA) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-92-3 0 1 N-Channel 60V 1.1A (Ta) 330 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V 850mW (Ta)
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Per Unit
$1.760
RFQ
4,942
In-stock
Diodes Incorporated MOSFET N-CH 100V 0.9A TO92-3 TO-226-3, TO-92-3 (TO-226AA) - Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-92-3 0 1 N-Channel 100V 900mA (Ta) 500 mOhm @ 3A, 10V 3V @ 1mA - 350pF @ 25V 5V, 10V ±20V 850mW (Ta)
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Per Unit
$0.141
RFQ
6,000
In-stock
Diodes Incorporated MOSFET P-CH 20V 2.1A SOT563 SOT-563, SOT-666 Automotive, AEC-Q101 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-563 0 3000 P-Channel 20V 2.1A (Ta) 150 mOhm @ 950mA, 4.5V 1V @ 250µA - 320pF @ 16V 1.8V, 4.5V ±12V 850mW (Ta)
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