Build a global manufacturer and supplier trusted trading platform.
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 80A TO220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 500 N-Channel - 75V 80A (Tc) 9 mOhm @ 46A, 10V 4V @ 100µA 84nC @ 10V 3070pF @ 50V 10V ±20V 140W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 120A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 500 N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V 230W (Tc)
Default Photo
Per Unit
$1.739
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Not For New Designs PG-TO220-3-1 0 500 N-Channel - 75V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 250µA 180nC @ 10V 4700pF @ 25V 10V ±20V 300W (Tc)
Default Photo
Per Unit
$1.607
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 100A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO220-3-1 0 500 N-Channel - 75V 100A (Tc) 7.1 mOhm @ 80A, 10V 4V @ 250µA 200nC @ 10V 4700pF @ 25V 10V ±20V 300W (Tc)
Default Photo
Per Unit
$1.351
VIEW
RFQ
Infineon Technologies MOSFET N-CH 75V 80A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 75V 80A (Tc) 6.2 mOhm @ 73A, 10V 3.8V @ 70µA 55nC @ 10V 3840pF @ 37.5V 10V ±20V 136W (Tc)
Page 1 / 1