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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 10A TO-220 TO-220-3 TEMPFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220AB 0 500 N-Channel - 100V 10A (Tc) 200 mOhm @ 5A, 10V 3.5V @ 1mA - 600pF @ 25V - - -
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Per Unit
$3.880
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STMicroelectronics MOSFET N-CH 600V 10A TO-220 TO-220-3 FDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-220AB 0 1 N-Channel - 600V 10A (Tc) 450 mOhm @ 5A, 10V 5V @ 250µA 30nC @ 10V 850pF @ 50V 10V ±25V 90W (Tc)
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Per Unit
$3.190
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STMicroelectronics MOSFET N-CH 600V 10A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 600V 10A (Tc) 750 mOhm @ 4.5A, 10V 4.5V @ 250µA 70nC @ 10V 1370pF @ 25V 10V ±30V 115W (Tc)
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Per Unit
$1.050
RFQ
7,641
In-stock
Infineon Technologies MOSFET N-CH 100V 10A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel - 100V 10A (Tc) 180 mOhm @ 6A, 10V 2V @ 250µA 20nC @ 5V 440pF @ 25V 4V, 10V ±16V 48W (Tc)
STP10NM60N
Per Unit
$3.150
RFQ
3,200
In-stock
STMicroelectronics MOSFET N-CH 600V 10A TO220 TO-220-3 MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 600V 10A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 50V 10V ±25V 70W (Tc)
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