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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 40V 2.5A 6-TSOP SOT-23-6 Thin, TSOT-23-6 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete Micro6™(TSOP-6) 0 100 P-Channel   - 40V 2.5A (Ta) 198 mOhm @ 2.5A, 10V 3V @ 250µA 21nC @ 10V 680pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Per Unit
$1.130
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STMicroelectronics MOSFET N-CH 100V 15A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 N-Channel   - 100V 15A (Tc) 130 mOhm @ 7A, 10V 4V @ 250µA 21nC @ 10V 460pF @ 25V 10V ±20V 60W (Tc)
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Per Unit
$1.690
RFQ
681
In-stock
STMicroelectronics MOSFET P-CH 60V 10A IPAK TO-251-3 Short Leads, IPak, TO-251AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Obsolete I-PAK 0 1 P-Channel   - 60V 10A (Tc) 200 mOhm @ 5A, 10V 4V @ 250µA 21nC @ 10V 850pF @ 25V 10V ±20V 40W (Tc)
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Infineon Technologies MOSFET 2N-CH 30V 5.3A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube   Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 570 2 N-Channel (Dual) 2.4W Logic Level Gate 30V 5.3A 50 mOhm @ 2.7A, 10V 3V @ 100µA 21nC @ 10V 515pF @ 25V      
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