Build a global manufacturer and supplier trusted trading platform.
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V 69A TO251-3-11 TO-251-3 Stub Leads, IPak OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO251-3 0 1500 N-Channel - 100V 69A (Tc) 11.8 mOhm @ 69A, 10V 2.4V @ 83µA 58nC @ 10V 5600pF @ 50V 4.5V, 10V ±20V 125W (Tc)
2SK2847(F)
GET PRICE
RFQ
8,755
In-stock
Toshiba MOSFET N-CH 900V 8A TO-3PN TO-3P-3, SC-65-3 - Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-3P(N)IS 0 50 N-Channel - 900V 8A (Ta) 1.4 Ohm @ 4A, 10V 4V @ 1mA 58nC @ 10V 2040pF @ 25V 10V ±30V 85W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 100V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) D-PAK 0 1 P-Channel - 100V 13A (Tc) 205 mOhm @ 7.8A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 66W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 100V 14A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1 P-Channel - 100V 14A (Tc) 200 mOhm @ 8.4A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 3.8W (Ta), 79W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 100V 13A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete IPAK (TO-251) 0 75 P-Channel - 100V 13A (Tc) 205 mOhm @ 7.8A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 66W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 100V 14A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 50 P-Channel - 100V 14A (Tc) 200 mOhm @ 8.4A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 3.8W (Ta), 79W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 100V 14A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK 0 50 P-Channel - 100V 14A (Tc) 200 mOhm @ 8.4A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 3.8W (Ta), 79W (Tc)
Default Photo
Per Unit
$1.460
VIEW
RFQ
STMicroelectronics MOSFET N-CH 60V 38A TO-220 TO-220-3 STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Active TO-220AB 0 1 N-Channel - 60V 38A (Tc) 28 mOhm @ 19A, 10V 4V @ 250µA 58nC @ 10V 980pF @ 25V 10V ±20V 80W (Tc)
Default Photo
Per Unit
$1.940
RFQ
368
In-stock
Infineon Technologies MOSFET N-CH 100V 69A TO220-3 TO-220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 1 N-Channel - 100V 69A (Tc) 12 mOhm @ 69A, 10V 2.4V @ 83µA 58nC @ 10V 5600pF @ 50V 4.5V, 10V ±20V 125W (Tc)
Default Photo
Per Unit
$1.860
RFQ
1,674
In-stock
Infineon Technologies MOSFET P-CH 100V 13A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs D-PAK 0 1 P-Channel - 100V 13A (Tc) 205 mOhm @ 7.8A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 66W (Tc)
Default Photo
Per Unit
$1.150
RFQ
1,294
In-stock
Infineon Technologies MOSFET P-CH 100V 14A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220AB 0 1 P-Channel - 100V 14A (Tc) 200 mOhm @ 8.4A, 10V 4V @ 250µA 58nC @ 10V 760pF @ 25V 10V ±20V 79W (Tc)
Page 1 / 1