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Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
45 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 30V 2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1440 P-Channel Schottky Diode (Isolated) 30V 2A (Ta) 200 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 4.5V, 10V ±20V 1.25W (Ta)
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Infineon Technologies MOSFET P-CH 55V 20A DPAK TO-252-4, DPak (3 Leads + Tab) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete I-PAK (LF701) 0 750 P-Channel - 55V 20A (Tc) 105 mOhm @ 3.4A, 10V 1V @ 250µA 47nC @ 10V 660pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-4, DPak (3 Leads + Tab) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete I-PAK (LF701) 0 600 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 12.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 30V 12.5A (Ta) 9 mOhm @ 12.5A, 10V 1V @ 250µA 78nC @ 10V 2240pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 10A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 30V 10A (Ta) 13.5 mOhm @ 10A, 10V 1V @ 250µA 45nC @ 10V 1585pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 65A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D-PAK 0 3000 N-Channel - 30V 65A (Tc) 10 mOhm @ 15A, 10V 1V @ 250µA 14nC @ 4.5V 1030pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 30V 7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 30V 7A (Ta) 30 mOhm @ 7A, 10V 1V @ 250µA 27nC @ 10V 550pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 13.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 155°C (TJ) 8-SO 0 3800 N-Channel - 30V 13.6A (Ta) 9.1 mOhm @ 13A, 10V 1V @ 250µA 14nC @ 4.5V 1010pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 5.8A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel Schottky Diode (Isolated) 30V 5.8A (Ta) 35 mOhm @ 4.1A, 10V 1V @ 250µA 27nC @ 10V 510pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 29 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 32 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET P-CH 30V 4.7A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 P-Channel Schottky Diode (Isolated) 30V 4.7A (Ta) 62 mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 7.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 N-Channel - 30V 7.3A (Tc) 30 mOhm @ 7.3A, 10V 1V @ 250µA 28nC @ 10V 550pF @ 25V 4.5V, 10V ±20V 2.5W (Tc)
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Infineon Technologies MOSFET P-CH 30V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1045 P-Channel Schottky Diode (Isolated) 30V 3.6A (Ta) 100 mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 65A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 1275 N-Channel - 30V 65A (Tc) 10 mOhm @ 15A, 10V 1V @ 250µA 14nC @ 4.5V 1030pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 1125 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 6000 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET P-CH 55V 3.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 3800 P-Channel Schottky Diode (Isolated) 55V 3.4A (Ta) 105 mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET P-CH 55V 20A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) D-PAK 0 1 P-Channel - 55V 20A (Tc) 105 mOhm @ 3.4A, 10V 1V @ 250µA 47nC @ 10V 660pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 30V 13.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 1140 N-Channel - 30V 13.6A (Ta) 12.5 mOhm @ 10A, 4.5V 1V @ 250µA 14nC @ 5V 1010pF @ 15V 4.5V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 55V 19A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 N-Channel - 55V 19A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 39W (Tc)
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Infineon Technologies MOSFET P-CH 55V 20A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete I-PAK 0 75 P-Channel - 55V 20A (Tc) 105 mOhm @ 3.4A, 10V 1V @ 250µA 47nC @ 10V 660pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 75 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET N-CH 55V 26A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -40°C ~ 175°C (TJ) Obsolete D-PAK 0 75 N-Channel - 55V 26A (Tc) 50 mOhm @ 4.7A, 10V 1V @ 250µA 42nC @ 10V 740pF @ 50V 4.5V, 10V ±20V 79W (Tc)
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Infineon Technologies MOSFET P-CH 55V 14A TO220FP TO-220-3 Full Pack HEXFET® Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-220AB Full-Pak 0 50 P-Channel - 55V 14A (Tc) 105 mOhm @ 3.4A, 10V 1V @ 250µA 47nC @ 10V 660pF @ 50V 4.5V, 10V ±20V 33W (Tc)
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Infineon Technologies MOSFET N-CH 30V 65A I-PAK TO-251-3 Short Leads, IPak, TO-251AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK 0 900 N-Channel - 30V 65A (Tc) 10 mOhm @ 15A, 10V 1V @ 250µA 14nC @ 4.5V 1030pF @ 15V 4.5V, 10V ±20V 75W (Tc)
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Infineon Technologies MOSFET P-CH 30V 3.6A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 P-Channel Schottky Diode (Isolated) 30V 3.6A (Ta) 100 mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) FETKY™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 95 N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V 2.5W (Ta)
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