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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 60V 270A TO262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-262 0 1000 N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V 380W (Tc)
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Infineon Technologies MOSFET N-CH 60V 195A TO-220AB TO-220-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB 0 250 N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V 380W (Tc)
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Per Unit
$4.200
RFQ
163
In-stock
STMicroelectronics MOSFET N-CH 30V 100A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA STripFET™ III Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAK 0 1 N-Channel - 30V 100A (Tc) 3.2 mOhm @ 50A, 10V 2.5V @ 250µA 88nC @ 5V 6200pF @ 25V 4.5V, 10V ±16V 300W (Tc)
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Per Unit
$3.400
RFQ
2,372
In-stock
STMicroelectronics MOSFET N-CH 55V 80A I2PAK TO-262-3 Long Leads, I²Pak, TO-262AA STripFET™ II Tube MOSFET (Metal Oxide) Through Hole 175°C (TJ) Obsolete I2PAK 0 1 N-Channel - 55V 80A (Tc) 8 mOhm @ 40A, 10V 2.5V @ 250µA 100nC @ 4.5V 4350pF @ 25V 5V, 10V ±16V 300W (Tc)
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