- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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899
In-stock
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Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
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472
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | ||||||||||
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147
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 15 A | 480 mOhms | 4.5 V | 123 nC | Enhancement | Linear L2 | ||||
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372
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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42,700
In-stock
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onsemi | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 480 mOhms | Enhancement | ||||||
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927
In-stock
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STMicroelectronics | MOSFET N Ch 600V 0.35 Ohm Zener SuperMESH 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11 A | 480 mOhms | 47 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.43 Ohm 9A MDmeshV 710V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | ||||||||||
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997
In-stock
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STMicroelectronics | MOSFET N-Channel 650V Power MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 480 mOhms | Enhancement |
