- Vgs - Gate-Source Voltage :
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36 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,092
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | ||||
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384
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | ||||
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645
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 1.25mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 400 A | 90 mOhms | 160 nC | |||||||||
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1,128
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | |||||||||
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2,662
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||||
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2,990
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
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GET PRICE |
68,250
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
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70,700
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 210 A | 2.8 mOhms | 160 nC | |||||||||
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499
In-stock
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IR / Infineon | MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 200 A | 2.8 mOhms | 160 nC | |||||||||
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67
In-stock
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IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | |||||
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GET PRICE |
39,200
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 160 nC | ||||||||
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330
In-stock
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Infineon Technologies | MOSFET MOSFT 24V 353A 1.5mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.2 mOhms | 160 nC | |||||||||
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98
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | Enhancement | ||||||
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291
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 160 nC | ||||||||||
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627
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | |||||
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272
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
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175
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 98A 23mOhm 160nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 98 A | 23 mOhms | 160 nC | Enhancement | ||||||
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155
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 206A 3.7mOhm 160nC | 20 V | Through Hole | TO-273-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 206 A | 3.7 mOhms | 160 nC | |||||||||
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222
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.5 mOhms | 160 nC | Enhancement | |||||||
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264
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | |||||||||
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223
In-stock
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Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 2.4 mOhms | 160 nC | |||||||||
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250
In-stock
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IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | |||||||||
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1,000
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 4 V | 160 nC | ||||||
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150
In-stock
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Infineon Technologies | MOSFET 40V 340A 1.75 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 160 nC | ||||||||
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350
In-stock
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IR / Infineon | MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 75 A | 2.4 mOhms | 160 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 400 A | 1.25 mOhms | 160 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 340 A | 1.5 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC |