- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (1)
- 11 mOhms (1)
- 13.5 mOhms (1)
- 14 mOhms (1)
- 14.6 mOhms (1)
- 140 mOhms (1)
- 15 mOhms (2)
- 150 mOhms (1)
- 17 mOhms (1)
- 17.9 mOhms (1)
- 18 mOhms (1)
- 2.45 mOhms (1)
- 22 mOhms (1)
- 250 mOhms (1)
- 29 mOhms (2)
- 30 mOhms (1)
- 35 mOhms (2)
- 4 mOhms (1)
- 4.4 mOhms (1)
- 40 mOhms (1)
- 50 mOhms (2)
- 62 mOhms (1)
- 7.5 mOhms (1)
- 8 mOhms (1)
- 8.2 mOhms (1)
- 8.5 mOhms (1)
- 9 mOhms (2)
- 98 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,189
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | ||||
|
|
2,449
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 62A 12mOhm 24nC | 12 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 62 A | 13.5 mOhms | 24 nC | |||||||
|
|
2,258
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | |||
|
|
3,740
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | |||
|
|
3,698
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | ||||
|
|
3,246
In-stock
|
IR / Infineon | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 6.6 A | 29 mOhms | 18 nC | Enhancement | ||||
|
|
1,944
In-stock
|
IR / Infineon | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | 42 nC | Enhancement | ||||
|
|
3,884
In-stock
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | 33.3 nC | Enhancement | ||||
|
|
4,026
In-stock
|
Infineon Technologies | MOSFET DUAL -20V P-CH 12 VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 4.3 A | 140 mOhms | 14.7 nC | Enhancement | ||||
|
|
3,015
In-stock
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | Enhancement | ||||
|
|
2,375
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | |||
|
|
2,469
In-stock
|
Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | ||||
|
|
1,315
In-stock
|
Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | Enhancement | ||||
|
|
1,555
In-stock
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 29mOhms 18nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 6.6 A | 29 mOhms | 0.7 V | 18 nC | Enhancement | |||
|
|
644
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 100 mOhms | 25 nC | Enhancement | ||||
|
|
876
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC | 12 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 20 V | 100 A | 4 mOhms | 48 nC | |||||||
|
|
3,800
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.5mOhms 37nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 2 V | 37 nC | ||||
|
|
2,920
In-stock
|
Infineon Technologies | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | |||
|
|
VIEW | Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.3 A | 50 mOhms | 13.3 nC | Enhancement | ||||
|
|
3,479
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 0.5 V to 1.1 V | 130 nC | Enhancement | |||
|
|
3,101
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.3 A | 9 mOhms | 41 nC | Enhancement | ||||
|
|
2,053
In-stock
|
IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 6.5mOhms 41nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 16 A | 7.5 mOhms | 41 nC | Enhancement | ||||
|
|
3,811
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 14.6 mOhms | 0.5 V to 1.1 V | 11 nC | Enhancement | |||
|
|
730
In-stock
|
IR / Infineon | MOSFET 12V DUAL N-CH HEXFET 15mOhms 17nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 12 V | 10 A | 15 mOhms | 0.6 V to 2 V | 17 nC | Enhancement | |||
|
|
1,379
In-stock
|
IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 1 V to 3 V | 10 nC | Enhancement | |||
|
|
1,545
In-stock
|
IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 30mOhms 13nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 7 A | 30 mOhms | 0.6 V to 1.2 V | 13 nC | Enhancement | |||
|
|
124
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.4 mOhms | 40 nC | Enhancement | ||||
|
|
8
In-stock
|
IR / Infineon | MOSFET 30V DUAL N-CH LO LOGIC LEVEL | 12 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 8.1 A | 17.9 mOhms | 11 nC | |||||||
|
|
33
In-stock
|
IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 8mOhms 26nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 12 V | 15 A | 8 mOhms | 1.9 V | 26 nC | Enhancement | |||
|
|
209
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 61 A | 14 mOhms | 0.6 V to 2 V | 24 nC | Enhancement |
