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- Series :
- Operating Temperature :
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- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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400
In-stock
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Infineon Technologies | MOSFET N-CH 55V 98A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Not For New Designs | TO-247AC | 0 | 1 | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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50,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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341
In-stock
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STMicroelectronics | MOSFET N-CH 500V 110A MAX247 | TO-247-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | MAX247™ | 0 | 1 | N-Channel | - | 500V | 110A (Tc) | 22 mOhm @ 52A, 10V | 4V @ 250µA | 326nC @ 10V | 9600pF @ 100V | 10V | ±25V | 625W (Tc) |
