- Manufacture :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,233
In-stock
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onsemi | MOSFET NFET DPAK 30V 38A 11MOHM | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 21 mOhms | 2.5 V | 8.2 nC | |||||||
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1,415
In-stock
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onsemi | MOSFET NFET IPAK 30V 79A 3.7 mOhm | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 79 A | 3.7 mOhms | ||||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | ||||
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1
In-stock
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onsemi | MOSFET NFET DPAK 30V 41A 8.0 mOhm | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 8 mOhms | 17.5 nC |
