- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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419
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V 22 A | 3 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 139 mOhms | 5 V | 64 nC | |||||||
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412
In-stock
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Fairchild Semiconductor | MOSFET SUPREMOS 22A-TO247 | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | 4 V | 45 nC | SupreMOS | ||||||
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450
In-stock
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IXYS | MOSFET 500V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | Enhancement | HyperFET | ||||||
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189
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 170mohm | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 170 mOhms | 3.5 V | 42 nC | Enhancement | SuperFET II | ||||
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150
In-stock
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IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | ||||
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162
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 85 mOhms | 3 V | 42 nC | Enhancement | CoolMOS | ||||
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98
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||||
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52
In-stock
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IXYS | MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 360 mOhms | 5 V | 38 nC | HyperFET | |||||||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET | ||||
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VIEW | IXYS | MOSFET 22 Amps 1400V | Through Hole | TO-247-3 | Tube | Si | 400 V | 22 A | ||||||||||||||
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VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 22 Amps 900V 0.47W Rds | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 22 A | 470 mOhms | HyperFET | ||||||||||
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8
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.32 Ohm 22A SuperMESH 3 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 950 V | 22 A | 360 mOhms | 105 nC |