- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,414
In-stock
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STMicroelectronics | MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29 A | 110 mOhms | 4 V | 80.4 nC | |||||
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240
In-stock
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Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
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19,800
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 110 mOhms | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 105 mOhms |
