- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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378
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 110 mOhms | 3 V | 93 nC | Enhancement | |||||
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232
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS247 | ||||
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10,800
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | ||||
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217
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 69 mOhms | 5 V | 125 nC | Enhancement | ||||||
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152
In-stock
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Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | ||||||||
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20
In-stock
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IXYS | MOSFET 600V 38A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 130 mOhms | Enhancement | HyperFET | ||||||
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20
In-stock
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IXYS | MOSFET 38 Amps 800V 0.22 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 38 A | 220 mOhms | Enhancement | HyperFET | ||||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | ||||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | |||||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS |