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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
13 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH30N50P
1+
$6.000
10+
$5.420
25+
$5.170
100+
$4.490
RFQ
484
In-stock
IXYS MOSFET 500V 30A 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms     Enhancement HyperFET
IXFH30N50Q3
1+
$9.840
10+
$8.890
25+
$8.480
100+
$7.360
RFQ
35
In-stock
IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A 30 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms   62 nC   HyperFET
IXFR36N60P
1+
$11.040
10+
$9.980
25+
$9.520
100+
$8.260
RFQ
45
In-stock
IXYS MOSFET 600V 20A 30 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 20 A 200 mOhms     Enhancement HyperFET
IXTH30N50L2
1+
$10.820
10+
$9.950
25+
$9.530
100+
$8.400
RFQ
53
In-stock
IXYS MOSFET 30.0 Amps 500V 0.002 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms 4.5 V 240 nC Enhancement Linear L2
IXFR44N80P
1+
$15.730
10+
$14.460
25+
$13.860
100+
$12.210
RFQ
18
In-stock
IXYS MOSFET DIODE Id26 BVdass800 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 25 A 200 mOhms 5 V 200 nC Enhancement PolarHV, HiPerFET
IXFH26N50
90+
$8.180
120+
$7.110
270+
$6.790
510+
$6.190
VIEW
RFQ
IXYS MOSFET DIODE Id26 BVdass500 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms     Enhancement HyperFET
IXFH26N50Q
90+
$8.180
120+
$7.110
270+
$6.790
510+
$6.190
VIEW
RFQ
IXYS MOSFET 500V 26A 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms     Enhancement HyperFET
IXFR26N50Q
30+
$9.330
120+
$8.100
270+
$7.740
510+
$7.060
VIEW
RFQ
IXYS MOSFET 24 Amps 500V 0.2 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 24 A 200 mOhms     Enhancement HyperFET
IXTH28N50Q
30+
$7.490
120+
$6.500
270+
$6.210
510+
$5.660
VIEW
RFQ
IXYS MOSFET 28 Amps 500 V 0.20 W Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 28 A 200 mOhms     Enhancement  
IXFR26N50
30+
$9.330
120+
$8.100
270+
$7.740
510+
$7.060
VIEW
RFQ
IXYS MOSFET 24 Amps 500V 0.2 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms     Enhancement HyperFET
IXTH30N50L
30+
$9.530
120+
$8.400
270+
$7.990
510+
$7.470
VIEW
RFQ
IXYS MOSFET 30 Amps 500V   Through Hole TO-247-3     Tube 1 Channel Si N-Channel 500 V 30 A 200 mOhms        
IXFH28N50Q
30+
$8.180
120+
$7.110
270+
$6.790
510+
$6.190
VIEW
RFQ
IXYS MOSFET 28 Amps 500V 0.20 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 28 A 200 mOhms     Enhancement HyperFET
STW24N60DM2
1+
$4.890
10+
$4.160
25+
$4.080
100+
$3.600
RFQ
468
In-stock
STMicroelectronics MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 25 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 18 A 200 mOhms 4 V 29 nC    
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