- Manufacture :
- Mounting Style :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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67
In-stock
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IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | ||||
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187
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm 14A pwr MDmesh K5 | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | ||||||||||
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32
In-stock
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IXYS | MOSFET N-CH 500V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | 199 nC | ||||||
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20
In-stock
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IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | |||
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47
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 300 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 300 mOhms | 140 nC | HyperFET | ||||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.35W Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement |
