- Manufacture :
- Vgs - Gate-Source Voltage :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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196
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | ||||
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65
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 165 mOhms | Enhancement | CoolMOS | ||||||
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34
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | ||||||||
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10
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV |