- Manufacture :
- Vgs - Gate-Source Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
329
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
|
|
175
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
|
|
100
In-stock
|
STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | |||||
|
|
100
In-stock
|
STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement |
