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- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,159
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | |||
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1,382
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | |||
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378
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 110 mOhms | 3 V | 93 nC | Enhancement | ||||
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522
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 49 mOhms | 2 V | 93 nC | Enhancement | |||||
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37
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 25 A | 154 mOhms | 93 nC | HyperFET | |||||||
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19
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/44A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | 93 nC | HyperFET |
