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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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256
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 195 A | 1.8 mOhms | 3.7 V | 830 nC | Enhancement | StrongIRFET | |||
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500
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 172A TO247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 172 A | 2.75 mOhms | 3.7 V | 142 nC | StrongIRFET | ||||
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15,000
In-stock
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IR / Infineon | MOSFET 40V 195A 1.4mOhm HEXFET 366W 300nC | 20 V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 404 A | 1.3 mOhms | 460 nC | StrongIRFET | ||||||||
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315
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 195A TO247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 1.65 mOhms | 3.7 V | 274 nC | StrongIRFET |
