- Manufacture :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 58A, 10V (2)
- 100 mOhm @ 9A, 10V (1)
- 13.9 mOhm @ 37A, 10V (1)
- 14 mOhm @ 44A, 10V (2)
- 14 mOhm @ 45A, 10V (1)
- 180 mOhm @ 6A, 10V (1)
- 200 mOhm @ 8.4A, 10V (1)
- 23 mOhm @ 40A, 10V (1)
- 25 mOhm @ 35.4A, 10V (1)
- 26 mOhm @ 29A, 10V (1)
- 26.5 mOhm @ 22A, 10V (2)
- 36 mOhm @ 22A, 10V (1)
- 4.3 mOhm @ 110A, 10V (1)
- 4.7 mOhm @ 106A, 10V (1)
- 44 mOhm @ 18A, 10V (2)
- 480 mOhm @ 4A, 10V (2)
- 6 mOhm @ 75A, 10V (1)
- 60 mOhm @ 24A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 7 mOhm @ 75A, 10V (2)
- 90 mOhm @ 9A, 10V (1)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 11360pF @ 50V (1)
- 1770pF @ 25V (2)
- 1800pF @ 25V (2)
- 1900pF @ 25V (1)
- 2450pF @ 25V (1)
- 2700pF @ 25V (1)
- 2780pF @ 25V (1)
- 3180pF @ 50V (1)
- 350pF @ 25V (2)
- 3550pF @ 50V (2)
- 3700pF @ 25V (1)
- 4270pF @ 25V (1)
- 440pF @ 25V (1)
- 5150pF @ 50V (2)
- 6160pF @ 25V (1)
- 6860pF @ 50V (1)
- 760pF @ 25V (1)
- 7670pF @ 50V (2)
- 800pF @ 25V (1)
- 920pF @ 25V (1)
- 9575pF @ 50V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW | Infineon Technologies | MOSFET N-CH 100V 75A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 1000 | N-Channel | - | 100V | 75A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | - | - | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 130A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 100V | 130A (Tc) | 7 mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | 10V | ±20V | 300W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 550 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 88A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 3200 | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 600 | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 75A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | 6160pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 73A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | 190W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 73A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 73A (Tc) | 14 mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | 3550pF @ 50V | 10V | ±20V | 190W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 96A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 96A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | 250W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 250 | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | 92W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 14A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | P-Channel | - | 100V | 14A (Tc) | 200 mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 6.8A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | P-Channel | - | 100V | 6.8A (Tc) | 480 mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 100V 40A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 200 | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 10A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 48W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 55A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 55A (Tc) | 26 mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 17A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 350 | N-Channel | - | 100V | 17A (Tc) | 90 mOhm @ 9A, 10V | 4V @ 250µA | 37nC @ 10V | 920pF @ 25V | 10V | ±20V | 3.8W (Ta), 70W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 42A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 3.8W (Ta), 160W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 17A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 50 | N-Channel | - | 100V | 17A (Tc) | 100 mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±20V | 3.8W (Ta), 79W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 61A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1000 | N-Channel | - | 100V | 61A (Tc) | 13.9 mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | 3180pF @ 50V | 10V | ±20V | 140W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | |||
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687
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 100V | 80A (Tc) | 23 mOhm @ 40A, 10V | 4V @ 250µA | 104nC @ 10V | 4270pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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547
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | 92W (Tc) | |||
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445
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | 250W (Tc) | |||
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103
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
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1,100
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) |
