- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.5 Ohm @ 2.2A, 10V (1)
- 1.8 mOhm @ 100A, 10V (1)
- 13.9 mOhm @ 31A, 10V (1)
- 15.8 mOhm @ 25A, 10V (1)
- 150 mOhm @ 11A, 10V (1)
- 185 mOhm @ 11A, 10V (1)
- 190 mOhm @ 9A, 10V (1)
- 2 mOhm @ 75A, 10V (1)
- 2 Ohm @ 2A, 10V (1)
- 2.4 mOhm @ 165A, 10V (1)
- 2.5 mOhm @ 170A, 10V (1)
- 2.6 mOhm @ 100A, 10V (1)
- 20 mOhm @ 42A, 10V (1)
- 23 mOhm @ 40A, 10V (1)
- 26.5 mOhm @ 22A, 10V (1)
- 3.2 mOhm @ 50A, 10V (1)
- 4 mOhm @ 40A, 10V (1)
- 4 mOhm @ 95A, 10V (1)
- 4.1 mOhm @ 75A, 10V (1)
- 4.2 mOhm @ 75A, 10V (1)
- 4.3 mOhm @ 110A, 10V (1)
- 4.7 mOhm @ 106A, 10V (1)
- 6 mOhm @ 75A, 10V (1)
- 6.5 mOhm @ 40A, 10V (1)
- 6.7 mOhm @ 51A, 10V (1)
- 60 mOhm @ 38A, 10V (1)
- 8 mOhm @ 40A, 10V (1)
- 8.4 mOhm @ 46A, 10V (1)
- 9 mOhm @ 46A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 100nC @ 4.5V (1)
- 104nC @ 10V (1)
- 109nC @ 10V (1)
- 110nC @ 4.5V (1)
- 120nC @ 10V (1)
- 130nC @ 10V (1)
- 130nC @ 4.5V (1)
- 140nC @ 4.5V (1)
- 16.9nC @ 10V (1)
- 170nC @ 10V (2)
- 180nC @ 10V (1)
- 189nC @ 10V (1)
- 200nC @ 10V (1)
- 215nC @ 10V (1)
- 225nC @ 10V (1)
- 230nC @ 10V (1)
- 240nC @ 10V (1)
- 26nC @ 10V (1)
- 300nC @ 10V (1)
- 30nC @ 10V (1)
- 407nC @ 10V (1)
- 43nC @ 10V (1)
- 57nC @ 10V (1)
- 63nC @ 10V (1)
- 65nC @ 10V (1)
- 67nC @ 10V (1)
- 84nC @ 10V (1)
- 88nC @ 5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 11210pF @ 50V (1)
- 11360pF @ 50V (1)
- 1150pF @ 50V (1)
- 1160pF @ 25V (1)
- 13660pF @ 25V (1)
- 1420pF @ 25V (1)
- 1770pF @ 25V (1)
- 1950pF @ 25V (1)
- 2340pF @ 25V (1)
- 2780pF @ 25V (1)
- 3070pF @ 50V (1)
- 3500pF @ 25V (1)
- 4020pF @ 25V (1)
- 4270pF @ 25V (1)
- 4350pF @ 25V (1)
- 4400pF @ 25V (1)
- 4440pF @ 25V (1)
- 4520pF @ 50V (1)
- 510pF @ 25V (1)
- 529pF @ 25V (1)
- 5500pF @ 25V (1)
- 6200pF @ 25V (1)
- 6450pF @ 25V (1)
- 6860pF @ 50V (1)
- 6920pF @ 50V (1)
- 7330pF @ 25V (1)
- 7360pF @ 25V (1)
- 8970pF @ 50V (1)
- 9575pF @ 50V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
55
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 75V | 195A (Tc) | 2.6 mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | 6V, 10V | ±20V | 375W (Tc) | |||
|
|
|
90
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 76A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 75V | 76A (Tc) | 8.4 mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | 6V, 10V | ±20V | 125W (Tc) | |||
|
|
|
89
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 85A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-262 | 0 | 1 | N-Channel | - | 75V | 85A (Tc) | 6.7 mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4440pF @ 25V | 6V, 10V | ±20V | 140W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | |||
|
|
|
487
In-stock
|
Infineon Technologies | MOSFET NCH 300V 19A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 | 0 | 1 | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V | 210W (Tc) | |||
|
|
|
874
In-stock
|
STMicroelectronics | MOSFET N-CH 500V 18A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 500V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 65nC @ 10V | 1950pF @ 25V | 10V | ±25V | 140W (Tc) | |||
|
|
|
687
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 100V | 80A (Tc) | 23 mOhm @ 40A, 10V | 4V @ 250µA | 104nC @ 10V | 4270pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
320
In-stock
|
Infineon Technologies | MOSFET N CH 40V 195A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET®, StrongIRFET™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | 7330pF @ 25V | 6V, 10V | ±20V | 230W (Tc) | |||
|
|
|
921
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 4A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Not For New Designs | I2PAK | 0 | 1 | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V | 70W (Tc) | |||
|
|
|
766
In-stock
|
STMicroelectronics | MOSFET N-CH 520V 4.4A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 520V | 4.4A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9nC @ 10V | 529pF @ 25V | 10V | ±30V | 70W (Tc) | |||
|
|
|
612
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 120A (Tc) | 4.2 mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | 4520pF @ 50V | 10V | ±20V | 230W (Tc) | |||
|
|
|
168
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | 150W (Tc) | |||
|
|
|
547
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | 92W (Tc) | |||
|
|
|
236
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 2 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
135
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -60°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 30V | 80A (Tc) | 4 mOhm @ 40A, 10V | 1V @ 250µA | 110nC @ 4.5V | 5500pF @ 25V | 4.5V, 10V | ±20V | 300W (Tc) | |||
|
|
|
163
In-stock
|
STMicroelectronics | MOSFET N-CH 30V 100A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ III | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 30V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 2.5V @ 250µA | 88nC @ 5V | 6200pF @ 25V | 4.5V, 10V | ±16V | 300W (Tc) | |||
|
|
|
2,372
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 40A, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | 5V, 10V | ±16V | 300W (Tc) | |||
|
|
|
764
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | 380W (Tc) | |||
|
|
|
445
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 120A (Tc) | 6 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6860pF @ 50V | 10V | ±20V | 250W (Tc) | |||
|
|
|
364
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | 300W (Tc) | |||
|
|
|
2,347
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 80A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 75V | 80A (Tc) | 9 mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | 3070pF @ 50V | 10V | ±20V | 140W (Tc) | |||
|
|
|
103
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | 370W (Tc) | |||
|
|
|
973
In-stock
|
STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 6.5 mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | 4400pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
1,100
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | |||
|
|
|
2,048
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 162A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
|
|
|
5,396
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | 80W (Tc) | |||
|
|
|
10,532
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 43A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 43A (Tc) | 15.8 mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | 10V | ±20V | 71W (Tc) | |||
|
|
|
3,148
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) |
