- Manufacture :
- Package / Case :
- Series :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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1,202
In-stock
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Infineon Technologies | MOSFET N-CH 30V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 155°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 20A (Ta) | 4 mOhm @ 20A, 10V | 2.32V @ 250µA | 51nC @ 4.5V | 4310pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 20A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 285 | N-Channel | - | 20V | 20A (Ta) | 4.4 mOhm @ 20A, 10V | 2.45V @ 250µA | 33nC @ 4.5V | 2890pF @ 10V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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GET PRICE |
3,520
In-stock
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Toshiba | MOSFET N-CH 600V 20A TO-220 | TO-220-3 | DTMOSIV | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220 | 0 | 50 | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | 165W (Tc) | ||
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GET PRICE |
30,100
In-stock
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Toshiba | MOSFET N-CH 600V 20A TO-220SIS | TO-220-3 Full Pack | DTMOSII | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220SIS | 0 | 1 | N-Channel | - | 600V | 20A (Ta) | 190 mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | 1470pF @ 10V | 10V | ±30V | 45W (Tc) |
