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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 40V 100A TO220-3-1 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete PG-TO220-3-1 0 500 N-Channel - 40V 100A (Tc) 2.7 mOhm @ 100A, 10V 4V @ 70µA 90nC @ 10V 7180pF @ 25V 10V ±20V 115W (Tc)
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Per Unit
$2.652
VIEW
RFQ
Infineon Technologies MOSFET N-CH TO220-3 OptiMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active PG-TO-220-3 0 500 N-Channel - 80V 120A (Tc) 2.7 mOhm @ 100A, 10V 3.8V @ 154µA 123nC @ 10V 8970pF @ 40V 6V, 10V ±20V 214W (Tc)
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Per Unit
$5.080
RFQ
2,983
In-stock
Texas instruments MOSFET N-CH 100V TO-220 NexFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-220-3 0 1 N-Channel - 100V 150A (Ta) 2.7 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V 375W (Tc)
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