- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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4,886
In-stock
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Infineon Technologies | MOSFET N-CH 100V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 195A (Tc) | 2.6 mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | 19860pF @ 50V | 10V | ±20V | 520W (Tc) | ||||
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4,083
In-stock
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Infineon Technologies | MOSFET N-CH 75V 195A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 75V | 195A (Tc) | 1.85 mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | 19230pF @ 50V | 10V | ±20V | 520W (Tc) | ||||
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20,558
In-stock
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Infineon Technologies | MOSFET N-CH 200V 130A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 200V | 130A (Tc) | 9.7 mOhm @ 81A, 10V | 5V @ 250µA | 241nC @ 10V | 10720pF @ 50V | 10V | ±30V | 520W (Tc) |