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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 210A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247AC | 0 | 25 | N-Channel | - | 30V | 210A (Tc) | 2.8 mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | 7V, 10V | ±20V | 3.8W (Ta), 230W (Tc) | ||||
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4,185
In-stock
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Infineon Technologies | MOSFET N-CH 30V 210A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 30V | 210A (Tc) | 2.8 mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | 7V, 10V | ±20V | 3.8W (Ta), 230W (Tc) | |||
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VIEW | onsemi | INTEGRATED CIRCUIT | 6-VDFN Exposed Pad | PowerTrench® | Bulk | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-MicroFET (2x2) | 0 | 0 | 2 N-Channel (Dual) | 650mW | Logic Level Gate | 30V | 2.9A | 123 mOhm @ 2.9A, 4.5V | 1.5V @ 250µA | 3nC @ 4.5V | 220pF @ 15V |
