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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 78A TO-247AC TO-247-3 HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -40°C ~ 175°C (TJ) Obsolete TO-247AC 0 250 N-Channel - 150V 78A (Tc) 15.5 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V 310W (Tc)
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Infineon Technologies MOSFET N-CH 100V 170A SUPER247 TO-274AA HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete SUPER-247 (TO-274AA) 0 25 N-Channel - 100V 170A (Tc) 9 mOhm @ 100A, 10V 5V @ 250µA 390nC @ 10V 6790pF @ 25V 10V ±30V 580W (Tc)
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Infineon Technologies MOSFET N-CH 150V 105A SUPER247 TO-274AA HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active SUPER-247 (TO-274AA) 0 7000 N-Channel - 150V 105A (Tc) 15 mOhm @ 63A, 10V 5V @ 250µA 390nC @ 10V 6810pF @ 25V 10V ±30V 441W (Tc)
K12J60U
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14,360
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Toshiba MOSFET N-CH 600V 12A TO-3PN TO-3P-3, SC-65-3 DTMOSII Bulk MOSFET (Metal Oxide) Through Hole 150°C (TJ) Active TO-3P(N) 0 1 N-Channel - 600V 12A (Ta) 400 mOhm @ 6A, 10V 5V @ 1mA 14nC @ 10V 720pF @ 10V 10V ±30V 144W (Tc)
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5,325
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Infineon Technologies MOSFET N-CH 100V 170A SUPER247 TO-274AA HEXFET® Bulk MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active SUPER-247 (TO-274AA) 0 1 N-Channel - 100V 170A (Tc) 9 mOhm @ 100A, 10V 5V @ 250µA 390nC @ 10V 6790pF @ 25V 10V ±30V 580W (Tc)
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