- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||
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444
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement | |||
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7
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 1000 V | 21 A | 380 mOhms | 3 V | 260 nC | Enhancement |