- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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928
In-stock
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onsemi | MOSFET PCH -60V -12A TP(IPAK) | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | |||
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1,664
In-stock
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onsemi | MOSFET NCH 100V 9A TP(IPAK) | 20 V | Through Hole | TO-251-3 | + 150 C | Bulk | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | ||||
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515
In-stock
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onsemi | MOSFET PCH -40V -10A TP(IPAK) | +/- 10 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 86 mOhms | - 1.4 V | 8 nC | Enhancement | |||
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628
In-stock
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onsemi | MOSFET NCH 10A 250V TP(IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement | |||
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1,469
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | |||||||||
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931
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 112 mOhms | |||||||||
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307
In-stock
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onsemi | MOSFET PCH 4.5V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 40 V | - 19 A | 45 mOhms |
