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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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14,360
In-stock
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Toshiba | MOSFET N-CH 600V 12A TO-3PN | TO-3P-3, SC-65-3 | DTMOSII | Bulk | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-3P(N) | 0 | 1 | N-Channel | - | 600V | 12A (Ta) | 400 mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | 720pF @ 10V | 10V | ±30V | 144W (Tc) | |||
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VIEW | onsemi | INTEGRATED CIRCUIT | 4-XFBGA | - | Bulk | Surface Mount | 150°C (TJ) | Obsolete | EFCP1313-4CC-037 | 0 | 0 | 2 N-Channel (Dual) Common Drain | 1.6W | Logic Level Gate, 2.5V Drive | 24V | 6A (Ta) | 45 mOhm @ 3A, 4.5V | 1.3V @ 1mA | 7nC @ 4.5V | - |
