- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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46,129
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||
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9,090
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | ||||
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6,198
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement | ||||
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14,712
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | ||||
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16,109
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 400 mA | 2 Ohms | Enhancement | ||||
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53,920
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 450 mA | 2 Ohms | Enhancement | ||||
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2,737
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | ||||
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2,842
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | ||||
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2,769
In-stock
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Diodes Incorporated | MOSFET N Chnl. 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 7.5 Ohms | Enhancement | ||||
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | |||
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1,873
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 270 mA | 5 Ohms | Enhancement | ||||
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1,479
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | |||||
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71
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement | ||||
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444
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | |||
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296
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 450 mA | 2 Ohms | Enhancement |
