- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Series :
- Technology :
- Rds On - Drain-Source Resistance :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Package :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
4,520
In-stock
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SANYO | PNP transistor | Tray | TO-92 | 100 | Green available | ||||||||||||||||||||||||||||||||||||
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GET PRICE |
450
In-stock
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Vishay Semiconductors | MOSFET | - 20 V, + 20 V | Tray | 150 W | N-Channel | 200 V | 27.4 A | 105 mOhms | TO-254-3 | 50 | Green available | ||||||||||||||||||||||||||||||
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GET PRICE |
4,692
In-stock
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Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tray | 1 Channel | 83 W | 100 V | 40 A | 10.3 mOhms | 1.7 V | 12 nC | TDSON-8 | 5000 | Green available | ||||||||||||||||||||||||||||
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GET PRICE |
1,293
In-stock
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Texas instruments | MOSFET N-CH 60V 200A TO220-3 | TO-220-3 | NexFET™ | Tray | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | - | 60V | 200A (Ta) | 44 mOhm @ 100A, 10V | 2.2V @ 250µA | 57nC @ 10V | 5070pF @ 30V | 4.5V, 10V | ±20V | 200W (Tc) | |||||||||||||||||||
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VIEW | Infineon Technologies | MOSFET 2 N-CH 1200V 100A MODULE | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11 mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | |||||||||||||||||||||||
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VIEW | Infineon Technologies | MOSFET 2 N-CH 1200V 50A MODULE | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | |||||||||||||||||||||||
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GET PRICE |
24
In-stock
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Infineon Technologies | MOSFET MODULE 1200V 50A | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23 mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V | ||||||||||||||||||||||
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5
In-stock
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Infineon Technologies | MOSFET MODULE 1200V 25A | Module | CoolSiC™ | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | Module | 0 | 1 | 2 N-Channel (Dual) | 20mW | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A | 45 mOhm @ 25A, 15V | 5.5V @ 10mA | 620nC @ 15V | 2000pF @ 800V | ||||||||||||||||||||||
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GET PRICE |
103
In-stock
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onsemi | MOSFET 5N-CH 650V 36A F1 MODULE | F1 Module | - | Tray | Chassis Mount | -40°C ~ 150°C (TJ) | Active | F1 | 0 | 1 | 5 N-Channel (Solar Inverter) | 250W | Standard | 650V | 36A | 90 mOhm @ 27A, 10V | 3.8V @ 250µA | - | - | ||||||||||||||||||||||
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VIEW | Renesas Electronics | MOSFET N-Channel MOSFET - LDPAK(S)-(1) | LDPAK-3 | Tray | Si | ||||||||||||||||||||||||||||||||||||||
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GET PRICE |
86,200
In-stock
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Toshiba | MOSFET MOSFET DTMOS-II N-CH 600V, 12A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | |||||||||||||||||||||||||||
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VIEW | Toshiba | MOSFET MOSFET DTMOS-II N-CH 600V, 20A | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 600 V | 20 A | 190 mOhms | Enhancement | ||||||||||||||||||||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-CH 500V, 15A | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 500 V | 15 A | 300 mOhms | Enhancement |
