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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
7,500
In-stock
STMicroelectronics N-CHANNEL 600 V, 0.550 OHM TYP., TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ M2-EP Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 600V 7.5A (Tc) 595 mOhm @ 3.75A, 10V 4.75V @ 250µA 12.4nC @ 10V 390pF @ 100V 10V ±25V 85W (Tc)
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RFQ
2,500
In-stock
STMicroelectronics MOSFET N-CH 60V 7.5A 8-SOIC 8-SOIC (0.154", 3.90mm Width) STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Active 8-SO 0 2500 N-Channel - 60V 7.5A (Tc) 19.5 mOhm @ 3.5A, 10V 1V @ 250µA 34nC @ 4.5V 1700pF @ 25V 5V, 10V ±16V 2.5W (Tc)
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