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Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 23A (Ta). 100A (Tc) 2.5 mOhm @ 30A, 10V 2V @ 250µA 98nC @ 10V 7600pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 83W (Tc)
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Infineon Technologies MOSFET N-CH 30V 100A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 25A (Ta), 100A (Tc) 2.5 mOhm @ 30A, 10V 2.2V @ 250µA 74nC @ 10V 6100pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 83W (Tc)
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