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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 100V 2A 6TSOP SOT-23-6 Thin, TSOT-23-6 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSOP6-6 0 3000 N-Channel - 100V 2A (Ta) 220 mOhm @ 2A, 10V 1.8V @ 218µA 14.3nC @ 10V 329pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 75V 2.5A 6TSOP SOT-23-6 Thin, TSOT-23-6 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSOP6-6 0 3000 N-Channel - 75V 2.5A (Ta) 150 mOhm @ 2.5A, 10V 1.8V @ 218µA 13.1nC @ 10V 315pF @ 25V 4.5V, 10V ±20V 2W (Ta)
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Infineon Technologies MOSFET N-CH 75V 2.3A SOT223 TO-261-4, TO-261AA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel - 75V 2.3A (Ta) 160 mOhm @ 2.3A, 10V 1.8V @ 218µA 13.1nC @ 10V 315pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 100V 1.7A SOT-223 TO-261-4, TO-261AA OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 1000 N-Channel - 100V 1.8A (Ta) 230 mOhm @ 1.8A, 10V 1.8V @ 218µA 14.3nC @ 10V 329pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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