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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N CH 200V 30A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Automotive, AEC-Q101, STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 1000 N-Channel   - 200V 30A (Tc) 75 mOhm @ 15A, 5V 3V @ 250µA 65nC @ 10V 1990pF @ 25V 5V ±20V 150W (Tc)
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2,500
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onsemi MOSFET N-CH 80V 8.9A 8SOIC 8-SOIC (0.154", 3.90mm Width) PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOIC 0 2500 N-Channel   - 80V 8.9A (Ta) 16 mOhm @ 8.9A, 10V 4V @ 250µA 41nC @ 10V 1990pF @ 25V 6V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET 2N-CH 8TDSON 8-PowerVDFN Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8-10 0 5000 2 N-Channel (Dual) 41W Logic Level Gate 40V 20A 11.6 mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V      
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Infineon Technologies MOSFET 2N-CH 8TDSON 8-PowerVDFN Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR)   Surface Mount -55°C ~ 175°C (TJ) Active PG-TDSON-8-4 0 5000 2 N-Channel (Dual) 41W Logic Level Gate 40V 20A 11.6 mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V      
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