- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | DirectFET™ Isometric MN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MN | 0 | 1000 | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | DirectFET™ Isometric MN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MN | 0 | 1000 | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 30V 80A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | STripFET™ II | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 30V | 80A (Tc) | 5.5 mOhm @ 40A, 10V | 2.5V @ 250µA | 27nC @ 5V | 2060pF @ 25V | 5V, 10V | ±20V | 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 80V 12A DIRECTFET | DirectFET™ Isometric MN | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MN | 0 | 4800 | N-Channel | - | 80V | 12A (Ta), 68A (Tc) | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | 2060pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) |
