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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.147
RFQ
12,000
In-stock
Diodes Incorporated MOSFET N-CH 12V 10.7A TSOT26 SOT-23-6 Thin, TSOT-23-6 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active TSOT-26 0 3000 N-Channel 12V 10.7A (Ta) 10 mOhm @ 9.7A, 4.5V 800mV @ 250µA 50.4nC @ 8V 2588pF @ 10V 1.2V, 4.5V ±8V 1.73W (Ta)
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Per Unit
$0.187
RFQ
615,000
In-stock
Diodes Incorporated MOSFET N CH 12V 11A U-DFN2020-6E 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type E) 0 3000 N-Channel 12V 11A (Ta) 10 mOhm @ 9.7A, 4.5V 800mV @ 250µA 50.6nC @ 8V 2425pF @ 10V 1.2V, 4.5V ±8V 690mW (Ta)
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