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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 25V 15A 8VQFN 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 4000 N-Channel - 25V 15A (Ta), 51A (Tc) 6 mOhm @ 15A, 10V 2.35V @ 25µA 14.5nC @ 10V 988pF @ 13V 4.5V, 10V ±20V 3.6W (Ta), 26W (Tc)
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Infineon Technologies MOSFET N-CH 30V 15A 5X6 PQFN 8-PowerVDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PQFN (5x6) Single Die 0 4000 N-Channel - 30V 15A (Ta), 44A (Tc) 8.1 mOhm @ 15A, 10V 2.35V @ 25µA 12nC @ 4.5V 1125pF @ 15V 4.5V, 10V ±20V 3.6W (Ta), 26W (Tc)
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