- Part Status :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Texas instruments | MOSFET P-CH 20V 4A 9DSBGA | 9-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 9-DSBGA | 0 | 3000 | P-Channel | - | 20V | 4A (Ta) | 40 mOhm @ 2A, 4.5V | 1.1V @ 250µA | 5.6nC @ 4.5V | 510pF @ 10V | 1.8V, 4.5V | -6V | 1.5W (Ta) | |||
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VIEW | Texas instruments | MOSFET P-CH 20V 4A 9DSBGA | 9-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9-DSBGA | 0 | 1500 | P-Channel | - | 20V | 4A (Ta) | 26 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | 1.8V, 4.5V | -6V | 500mW (Ta) | |||
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VIEW | Texas instruments | MOSFET P-CH 20V 4A 9DSBGA | 9-UFBGA, DSBGA | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9-DSBGA | 0 | 3000 | P-Channel | - | 20V | 4A (Ta) | 26 mOhm @ 2A, 4.5V | 1.05V @ 250µA | 7.5nC @ 4.5V | 1010pF @ 10V | 1.8V, 4.5V | -6V | 500mW (Ta) |
